Techniques for controlling a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for controlling a direct injection semiconductor memory device comprising applying a first voltage potential to a first region via a bit line, applying a second voltage potential to a second region of the memory device via a source line, applying a control voltage potential to a body region of the memory device via a word line that is spaced apart and capacitively coupled to the body region, and applying a third voltage potential to a third region of the memory device via a carrier injection line in order to bias at least one of the first region, the second region, the third region, and the body region to perform one or more operations.