Invention Grant
- Patent Title: Soft program of a non-volatile memory block
- Patent Title (中): 非易失性存储器块的软程序
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Application No.: US12835309Application Date: 2010-07-13
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Publication No.: US08351276B2Publication Date: 2013-01-08
- Inventor: Jon S. Choy , Chen He , Michael A. Sadd
- Applicant: Jon S. Choy , Chen He , Michael A. Sadd
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna G. Chiu; James L. Clingan, Jr.
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A method includes erasing bits and identifying bits that have been over-erased by the erasing. A first subset of the bits that have been over-erased are soft programmed. The results of soft programming the first subset of bits is measured. An initial voltage condition from a plurality of possible voltage conditions based on the results from soft programming the first subset of bits is selected. A second subset of bits that have been over-erased are soft programmed. The soft programming applies the initial voltage condition to the bits in the second subset of bits. The second subset comprises bits that are still over-erased when the step of selecting occurs. The result is that the soft programming for the second subset may begin at a more optimum point for quickly achieving the needed soft programming to bring all of the bits within the desired erase condition.
Public/Granted literature
- US20120014179A1 SOFT PROGRAM OF A NON-VOLATILE MEMORY BLOCK Public/Granted day:2012-01-19
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