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US08351279B2 SRAM bitcell data retention control for leakage optimization 有权
SRAM位单元数据保留控制,用于泄漏优化

SRAM bitcell data retention control for leakage optimization
Abstract:
An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.
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