Invention Grant
- Patent Title: SRAM bitcell data retention control for leakage optimization
- Patent Title (中): SRAM位单元数据保留控制,用于泄漏优化
-
Application No.: US12846129Application Date: 2010-07-29
-
Publication No.: US08351279B2Publication Date: 2013-01-08
- Inventor: Yukit Tang , Kuoyuan Hsu
- Applicant: Yukit Tang , Kuoyuan Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C7/06
- IPC: G11C7/06

Abstract:
An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.
Public/Granted literature
- US20120026805A1 SRAM BITCELL DATA RETENTION CONTROL FOR LEAKAGE OPTIMIZATION Public/Granted day:2012-02-02
Information query