Invention Grant
- Patent Title: Reading memory data
- Patent Title (中): 读取内存数据
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Application No.: US12908670Application Date: 2010-10-20
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Publication No.: US08351280B2Publication Date: 2013-01-08
- Inventor: Jui-Jen Wu , Shao-Yu Chou
- Applicant: Jui-Jen Wu , Shao-Yu Chou
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A circuit includes a reference data line configured to receive a reference voltage value, a memory cell, a data line coupled to the memory cell and configured to have a data logic value associated with data stored in the memory cell, a first circuit coupled to the reference data line and to the data line, and an output node configured to selectively receive the data logic value from the data line or receive the data logic value through the first circuit, based on the reference voltage value and a trip point used to trigger the first circuit to provide the data logic value through the first circuit.
Public/Granted literature
- US20120099382A1 READING MEMORY DATA Public/Granted day:2012-04-26
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