Invention Grant
US08351289B1 Apparatuses and methods for sensing a phase-change test cell and determining changes to the test cell resistance due to thermal exposure
有权
用于感测相变测试电池并确定由于热暴露引起的测试电池电阻变化的装置和方法
- Patent Title: Apparatuses and methods for sensing a phase-change test cell and determining changes to the test cell resistance due to thermal exposure
- Patent Title (中): 用于感测相变测试电池并确定由于热暴露引起的测试电池电阻变化的装置和方法
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Application No.: US12655377Application Date: 2009-12-30
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Publication No.: US08351289B1Publication Date: 2013-01-08
- Inventor: Jason Brand , Jason Snodgress
- Applicant: Jason Brand , Jason Snodgress
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/04
- IPC: G11C7/04
Abstract:
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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