Invention Grant
US08351317B2 Laser irradiation apparatus, irradiation method using the same, and method of crystallizing amorphous silicon film using the same
有权
激光照射装置，使用该激光照射装置的照射方法以及使用其的使非晶硅膜结晶的方法
- Patent Title: Laser irradiation apparatus, irradiation method using the same, and method of crystallizing amorphous silicon film using the same
- Patent Title (中): 激光照射装置，使用该激光照射装置的照射方法以及使用其的使非晶硅膜结晶的方法
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Application No.: US12946715Application Date: 2010-11-15
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Publication No.: US08351317B2Publication Date: 2013-01-08
- Inventor: Ji-Hwan Kim
- Applicant: Ji-Hwan Kim
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2009-0113426 20091123
- Main IPC: G11B7/00
- IPC: G11B7/00
Abstract:
Provided are a laser irradiation apparatus, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same. Particularly, a laser irradiation apparatus which can reduce a deviation of an intensity of a laser beam, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same, which can improve uniformity in crystallization into a polycrystalline silicon thin film, are provided.
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