Invention Grant
US08351478B2 Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates
有权
在{30-31}或切割含镓和氮的底物上形成激光二极管的生长结构和方法
- Patent Title: Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates
- Patent Title (中): 在{30-31}或切割含镓和氮的底物上形成激光二极管的生长结构和方法
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Application No.: US12884993Application Date: 2010-09-17
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Publication No.: US08351478B2Publication Date: 2013-01-08
- Inventor: James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
- Applicant: James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
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