Doped graphene electronic materials

Invention Grant

US08354323B2 Doped graphene electronic materials 有权

Patent Title: Doped graphene electronic materials
Application No.: US12800056

Application Date: 2010-05-07
Publication No.: US08354323B2

Publication Date: 2013-01-15
Inventor: Jeffrey A. Bowers , Roderick A. Hyde , Muriel Y. Ishikawa , Jordin T. Kare , Clarence T. Tegreene , Tatsushi Toyokuni , Richard N. Zare
Applicant: Jeffrey A. Bowers , Roderick A. Hyde , Muriel Y. Ishikawa , Jordin T. Kare , Clarence T. Tegreene , Tatsushi Toyokuni , Richard N. Zare
Applicant Address: US WA Bellevue
Assignee: Searete LLC
Current Assignee: Searete LLC
Current Assignee Address: US WA Bellevue
Main IPC: H01L21/331
IPC: H01L21/331 ; H01L21/8222

Abstract:

A graphene substrate is doped with one or more functional groups to form an electronic device.

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/328	....制造双极型器件，例如二极管、晶体管、晶闸管的台阶式工艺
H01L21/33	.....包括3个或更多电极的器件
H01L21/331	......晶体管