发明授权
US08354335B2 Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate
有权
用于制造浮动栅极单元的装置和相关方法，其在控制栅极和浮动栅极之间具有增加的覆盖
- 专利标题： Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate
- 专利标题（中）： 用于制造浮动栅极单元的装置和相关方法，其在控制栅极和浮动栅极之间具有增加的覆盖
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申请号： US12975737申请日： 2010-12-22
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公开(公告)号： US08354335B2公开(公告)日： 2013-01-15
- 发明人: Chen-Chin Liu , Lan Ting Huang , Ling Kuey Yang , Po Hsuan Wu
- 申请人： Chen-Chin Liu , Lan Ting Huang , Ling Kuey Yang , Po Hsuan Wu
- 申请人地址： TW
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW
- 代理机构： Baker & McKenzie LLP
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763
摘要：
A method for fabricating a floating gate memory device comprises using a buried diffusion oxide that is below the floating gate thereby producing an increased step height between the floating gate and the buried diffusion oxide. The increased step height can produce a higher GCR, while still allowing decreased cell size using a virtual ground array design.
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