发明授权
- 专利标题： Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer
- 专利标题（中）： 含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管
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申请号： US13200321申请日： 2011-09-23
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公开(公告)号： US08354533B2公开(公告)日： 2013-01-15
- 发明人: Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
- 申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2007-0016551 20070216
- 主分类号： C07F1/12
- IPC分类号： C07F1/12 ; H01L51/50
摘要：
Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
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