Invention Grant
US08354654B2 Apparatus and method for ion beam implantation using scanning and spot beams with improved high dose beam quality 有权
使用具有改进的高剂量光束质量的扫描和点光束进行离子束注入的装置和方法

  • Patent Title: Apparatus and method for ion beam implantation using scanning and spot beams with improved high dose beam quality
  • Patent Title (中): 使用具有改进的高剂量光束质量的扫描和点光束进行离子束注入的装置和方法
  • Application No.: US12661522
    Application Date: 2010-03-18
  • Publication No.: US08354654B2
    Publication Date: 2013-01-15
  • Inventor: Jiong Chen
  • Applicant: Jiong Chen
  • Applicant Address: CN
  • Assignee: Kingstone Semiconductor Company
  • Current Assignee: Kingstone Semiconductor Company
  • Current Assignee Address: CN
  • Agent Bo-In Lin
  • Main IPC: H01J37/317
  • IPC: H01J37/317
Apparatus and method for ion beam implantation using scanning and spot beams with improved high dose beam quality
Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.
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