发明授权
- 专利标题： CMOS transistors with stressed high mobility channels
- 专利标题（中）： 具有应力高移动性通道的CMOS晶体管
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申请号： US12855738申请日： 2010-08-13
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公开(公告)号： US08354694B2公开(公告)日： 2013-01-15
- 发明人: Stephen W. Bedell , Jee H. Kim , Siegfried L. Maurer , Alexander Reznicek , Devendra K. Sadana
- 申请人： Stephen W. Bedell , Jee H. Kim , Siegfried L. Maurer , Alexander Reznicek , Devendra K. Sadana
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A p-type field effect transistor (PFET) having a compressively stressed channel and an n-type field effect transistor (NFET) having a tensilely stressed channel are formed. In one embodiment, a silicon-germanium alloy is employed as a device layer, and the source and drain regions of the PFET are formed employing embedded germanium-containing regions, and source and drain regions of the NFET are formed employing embedded silicon-containing regions. In another embodiment, a germanium layer is employed as a device layer, and the source and drain regions of the PFET are formed by implanting a Group IIIA element having an atomic radius greater than the atomic radius of germanium into portions of the germanium layer, and source and drain regions of the NFET are formed employing embedded silicon-germanium alloy regions. The compressive stress and the tensile stress enhance the mobility of charge carriers in the PFET and the NFET, respectively.
公开/授权文献
- US20120037998A1 CMOS TRANSISTORS WITH STRESSED HIGH MOBILITY CHANNELS 公开/授权日：2012-02-16