- 专利标题: Semiconductor device and method of driving the same
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申请号: US13525653申请日: 2012-06-18
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公开(公告)号: US08355065B2公开(公告)日: 2013-01-15
- 发明人: Hajime Kimura
- 申请人: Hajime Kimura
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2000-111424 20000412
- 主分类号: H04N3/14
- IPC分类号: H04N3/14 ; H04N5/335
摘要:
To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The semiconductor device having an amplifying transistor and a biasing transistor and the driving method thereof, wherein an electric discharging transistor is provided and pre-discharge is performed.
公开/授权文献
- US20120256241A1 Semiconductor Device and Method of Driving the Same 公开/授权日:2012-10-11
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