Invention Grant
US08357264B2 Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
有权
等离子体反应器，通过源功率或偏置功率RF发生器的同步调制实现等离子体负载阻抗调谐
- Patent Title: Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
- Patent Title (中): 等离子体反应器，通过源功率或偏置功率RF发生器的同步调制实现等离子体负载阻抗调谐
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Application No.: US12128963Application Date: 2008-05-29
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Publication No.: US08357264B2Publication Date: 2013-01-22
- Inventor: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00
Abstract:
In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
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