Invention Grant
- Patent Title: Image sensor with low electrical cross-talk
- Patent Title (中): 图像传感器具有低电气串扰
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Application No.: US12259143Application Date: 2008-10-27
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Publication No.: US08357984B2Publication Date: 2013-01-22
- Inventor: Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
- Applicant: Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
Public/Granted literature
- US20090200590A1 IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK Public/Granted day:2009-08-13
Information query
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