Invention Grant
US08357993B2 Structure in a high voltage path of an ultra-high voltage device for providing ESD protection
有权
在用于提供ESD保护的超高压装置的高压路径中的结构
- Patent Title: Structure in a high voltage path of an ultra-high voltage device for providing ESD protection
- Patent Title (中): 在用于提供ESD保护的超高压装置的高压路径中的结构
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Application No.: US13091264Application Date: 2011-04-21
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Publication No.: US08357993B2Publication Date: 2013-01-22
- Inventor: Jian-Hsing Lee
- Applicant: Jian-Hsing Lee
- Applicant Address: TW Hsinchu
- Assignee: Richtek Technology Corp.
- Current Assignee: Richtek Technology Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW99113056A 20100426
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
An ultra-high voltage device has a high voltage path established from a high voltage N-well through a first metal layer to a second metal layer, and a contact plug electrically connected between the high voltage N-well and the first metal layer. The contact plug has a distributed structure on a horizontal layout to improve the uniformity of the ultra-high voltage device such that the current in the high voltage path will be more uniform distributed so as to avoid the localized heat concentration caused by non-uniform current distribution that would damage the ultra-high voltage device. Multiple fuse apparatus are preferably connected to the first metal layer individually. Each the fuse apparatus includes a poly fuse to be burnt down when an over-load current flows therethrough.
Public/Granted literature
- US20110260287A1 STRUCTURE IN A HIGH VOLTAGE PATH OF AN ULTRA-HIGH VOLTAGE DEVICE FOR PROVIDING ESD PROTECTION Public/Granted day:2011-10-27
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