Invention Grant
US08358458B2 Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
失效
低温非晶硅牺牲层，用于MEMS器件中的受控粘附
- Patent Title: Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
- Patent Title (中): 低温非晶硅牺牲层，用于MEMS器件中的受控粘附
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Application No.: US12939909Application Date: 2010-11-04
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Publication No.: US08358458B2Publication Date: 2013-01-22
- Inventor: James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
- Applicant: James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: G02B26/00
- IPC: G02B26/00
Abstract:
Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
Public/Granted literature
- US20110051224A1 LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES Public/Granted day:2011-03-03
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