A content addressable memory (CAM) device can include a number of bit line. One or more of the bit lines can be connected to storage circuits of CAM cells in a corresponding column. Each CAM cell can include compare circuits that compare a stored value one or more compare data values. An isolation circuit can have a controllable impedance path connected between the bit line and a precharge voltage node and can be controlled by application of a potential at a control node. A control circuit can be coupled to the control node and can switch the isolation circuit from a high impedance state to a low impedance state in response to, and no later than the start of, an access operation.