发明授权
US08360003B2 Plasma reactor with uniform process rate distribution by improved RF ground return path
有权
等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路
- 专利标题： Plasma reactor with uniform process rate distribution by improved RF ground return path
- 专利标题（中）： 等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路
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申请号： US12501966申请日： 2009-07-13
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公开(公告)号： US08360003B2公开(公告)日： 2013-01-29
- 发明人: Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
- 申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; H01L21/306
摘要：
In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.