Etching apparatus and etching method

Invention Grant

US08361274B2 Etching apparatus and etching method 有权

Title translation: 蚀刻装置和蚀刻方法

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Patent Title: Etching apparatus and etching method
Patent Title (中): 蚀刻装置和蚀刻方法
Application No.: US11032651

Application Date: 2005-01-10
Publication No.: US08361274B2

Publication Date: 2013-01-29
Inventor: Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
Applicant: Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
Applicant Address: KR Suwon JP Chigasaki-Shi
Assignee: Samsung Electronics Co., Ltd,Ulvac, Inc.
Current Assignee: Samsung Electronics Co., Ltd,Ulvac, Inc.
Current Assignee Address: KR Suwon JP Chigasaki-Shi
Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
Priority: JPP2004-005212 20040113; JPP2004-005213 20040113; JPP2004-005218 20040113; JPP2004-005220 20040113
Main IPC: H01L21/3065
IPC: H01L21/3065 ; C23C16/455 ; C23C16/00

Abstract:

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Abstract(Chinese):

真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

Public/Granted literature

US20050150861A1 Etching apparatus and etching method Public/Granted day:2005-07-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀