发明授权
- 专利标题: Method for forming transparent conductive oxide
- 专利标题(中): 形成透明导电氧化物的方法
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申请号: US12748790申请日: 2010-03-29
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公开(公告)号: US08361835B2公开(公告)日: 2013-01-29
- 发明人: Valery V. Komin , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
- 申请人: Valery V. Komin , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
公开/授权文献
- US20100311204A1 METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE 公开/授权日:2010-12-09
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