Invention Grant
- Patent Title: Embedded wafer-level bonding approaches
- Patent Title (中): 嵌入式晶圆级接合方式
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Application No.: US12880736Application Date: 2010-09-13
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Publication No.: US08361842B2Publication Date: 2013-01-29
- Inventor: Chen-Hua Yu , Jing-Cheng Lin
- Applicant: Chen-Hua Yu , Jing-Cheng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/50
- IPC: H01L21/50

Abstract:
A method includes providing a carrier with an adhesive layer disposed thereon; and providing a die including a first surface, a second surface opposite the first surface. The die further includes a plurality of bond pads adjacent the second surface; and a dielectric layer over the plurality of bond pads. The method further includes placing the die on the adhesive layer with the first surface facing toward the adhesive layer and dielectric layer facing away from the adhesive layer; forming a molding compound to cover the die, wherein the molding compound surrounds the die; removing a portion of the molding compound directly over the die to expose the dielectric layer; and forming a redistribution line above the molding compound and electrically coupled to one of the plurality of bond pads through the dielectric layer.
Public/Granted literature
- US20120028411A1 Embedded Wafer-Level Bonding Approaches Public/Granted day:2012-02-02
Information query
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