Stress-inducing structures, methods, and materials

Invention Grant

US08361879B2 Stress-inducing structures, methods, and materials 有权

Title translation: 应力诱导结构，方法和材料

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Patent Title: Stress-inducing structures, methods, and materials
Patent Title (中): 应力诱导结构，方法和材料
Application No.: US12122849

Application Date: 2008-05-19
Publication No.: US08361879B2

Publication Date: 2013-01-29
Inventor: Alois Gutmann , Roland Hampp , Scott Jansen
Applicant: Alois Gutmann , Roland Hampp , Scott Jansen
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/76
IPC: H01L21/76

Abstract:

Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Abstract(Chinese):

公开了应力诱导结构，方法和材料。在一个实施例中，隔离区域包括在工件中形成的沟槽的下部中的绝缘材料和设置在绝缘材料上方的沟槽顶部的应力诱导材料。

Public/Granted literature

US20090283852A1 Stress-Inducing Structures, Methods, and Materials Public/Granted day:2009-11-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作