发明授权
- 专利标题: Layout structure of non-volatile memory device
- 专利标题(中): 非易失性存储器件的布局结构
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申请号: US12568953申请日: 2009-09-29
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公开(公告)号: US08362535B2公开(公告)日: 2013-01-29
- 发明人: Hung-Lin Shih , Jr-Bin Chen , Pei-Ching Yin , Hui-Fang Tsai
- 申请人: Hung-Lin Shih , Jr-Bin Chen , Pei-Ching Yin , Hui-Fang Tsai
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理商 Ding Yu Tan
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/66
摘要:
A non-volatile memory cell includes a semiconductor substrate with isolation structures formed therein and thereby transistor region and capacitor region are defined therein. A conductor is disposed over the isolation structures, the transistor region and a first-type doped well disposed in the capacitor region. The conductor includes a capacitor portion disposed over the first-type doped well, a transistor portion disposed over the transistor region, a first edge disposed over the isolation structure at a side of the transistor region, and an opposite second edge disposed over the first-type doped well. Two first ion doped wells are disposed in the transistor region and respectively at two sides of the transistor portion, and constitutes a transistor with the transistor portion. A second ion doped region is disposed in the capacitor region excluding the conductor and constitutes a capacitor with the capacitor portion.