发明授权
US08362548B2 Contact structure for semiconductor device having trench shield electrode and method
有权
具有沟槽屏蔽电极的半导体器件的接触结构及方法
- 专利标题： Contact structure for semiconductor device having trench shield electrode and method
- 专利标题（中）： 具有沟槽屏蔽电极的半导体器件的接触结构及方法
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申请号： US12271030申请日： 2008-11-14
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公开(公告)号： US08362548B2公开(公告)日： 2013-01-29
- 发明人: Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
- 申请人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
- 申请人地址： US AZ Phoenix
- 专利权人： Semiconductor Components Industries, LLC
- 当前专利权人： Semiconductor Components Industries, LLC
- 当前专利权人地址： US AZ Phoenix
- 代理商 Kevin B. Jackson
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.