发明授权
US08362554B2 MOSFET semiconductor device with backgate layer and reduced on-resistance
失效
具有背栅层和降低导通电阻的MOSFET半导体器件
- 专利标题： MOSFET semiconductor device with backgate layer and reduced on-resistance
- 专利标题（中）： 具有背栅层和降低导通电阻的MOSFET半导体器件
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申请号： US12878979申请日： 2010-09-09
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公开(公告)号： US08362554B2公开(公告)日： 2013-01-29
- 发明人: Tomoko Matsudai , Norio Yasuhara , Takashi Tsurugai , Kumiko Sato
- 申请人： Tomoko Matsudai , Norio Yasuhara , Takashi Tsurugai , Kumiko Sato
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JP2009-244117 20091023
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, an insulating film, a gate electrode, a first semiconductor region, and a second semiconductor region. The source region includes a source layer of the first conductivity type, a first back gate layer of the second conductivity type, and a second back gate layer of the second conductivity type. The first back gate layer is adjacent to the second semiconductor region on one side in a channel length direction, and is adjacent to the source layer on one other side in the channel length direction. The second back gate layer is adjacent to the source layer on the one side in the channel length direction, and is adjacent to the second semiconductor region on the one other side in the channel length direction.
公开/授权文献
- US20110095369A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-04-28
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