Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12835514Application Date: 2010-07-13
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Publication No.: US08362556B2Publication Date: 2013-01-29
- Inventor: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- Applicant: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2009-0110927 20091117
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end; portion thereof extending over the isolation layer.
Public/Granted literature
- US20110115016A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-05-19
Information query
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