发明授权
- 专利标题： Isolated epitaxial modulation device
- 专利标题（中）： 隔离外延调制装置
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申请号： US13050536申请日： 2011-03-17
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公开(公告)号： US08362564B2公开(公告)日： 2013-01-29
- 发明人: Yu Li , Steven Howard Voldman
- 申请人： Yu Li , Steven Howard Voldman
- 申请人地址： US CA Milpitas
- 专利权人： Intersil Americas Inc.
- 当前专利权人： Intersil Americas Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Fogg & Powers LLC
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.
公开/授权文献
- US20120044732A1 ISOLATED EPITAXIAL MODULATION DEVICE 公开/授权日：2012-02-23
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