发明授权
US08363175B2 Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and method of manufacturing liquid crystal panel 有权
有源矩阵基板,液晶面板,液晶显示单元,液晶显示装置,电视接收机以及液晶面板的制造方法

  • 专利标题: Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and method of manufacturing liquid crystal panel
  • 专利标题(中): 有源矩阵基板,液晶面板,液晶显示单元,液晶显示装置,电视接收机以及液晶面板的制造方法
  • 申请号: US12532700
    申请日: 2008-02-22
  • 公开(公告)号: US08363175B2
    公开(公告)日: 2013-01-29
  • 发明人: Ikumi ItsumiToshihide Tsubata
  • 申请人: Ikumi ItsumiToshihide Tsubata
  • 申请人地址: JP Osaka-shi, Osaka
  • 专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人地址: JP Osaka-shi, Osaka
  • 代理机构: Nixon & Vanderhye, P.C.
  • 优先权: JP2007-171275 20070628
  • 国际申请: PCT/JP2008/053058 WO 20080222
  • 国际公布: WO2009/001578 WO 20081231
  • 主分类号: G02F1/136
  • IPC分类号: G02F1/136
Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and method of manufacturing liquid crystal panel
摘要:
A scanning signal line (16) has an opening (29) in the vicinity of an intersection with a data signal line (15). A first transistor (12a) includes two source electrodes (9ax and 9ay) which sandwich a drain electrode (8a); a source electrode (9ax) is connected to the data signal line (15) via a source extension electrode (10ax) stretched above the opening (29), and a source electrode (9ay) is connected to the data signal line (15) via a source extension electrode (10ay) provided off the scanning signal line (16). A second transistor (12b) includes two source electrodes (9bx and 9by) that sandwich a drain electrode (8b) therebetween. A source electrode (9bx) is connected to the data signal line (15) via a source extension electrode (10bx), and a source electrode (9by) is connected to the data signal line (15) via a source extension electrode (10by) off the scanning signal line. According to the configuration, it is possible to repair an SG leak while maintaining function of the transistors operable as much as possible.
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