Invention Grant
- Patent Title: Electrostatic discharge protection circuit
- Patent Title (中): 静电放电保护电路
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Application No.: US12462880Application Date: 2009-08-11
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Publication No.: US08363366B2Publication Date: 2013-01-29
- Inventor: Po-Ching Lin , Cheng-Jui Chen
- Applicant: Po-Ching Lin , Cheng-Jui Chen
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW97130937A 20080814
- Main IPC: H02H3/00
- IPC: H02H3/00 ; H02H9/00 ; H02H1/00 ; H02H1/04 ; H02H1/22 ; H02H9/06

Abstract:
An electrostatic discharge (ESD) protection circuit is disclosed, which comprises an ESD detection circuit and protection switches. If an ESD event occurs, the ESD detection circuit turns off the protection switches so as to protect an application circuit provided in integrated circuits (IC) from being damaged by the electrostatic discharge, and if not, the ESD detection circuit turns on the protection switches so as to make the application circuit provided in integrated circuits (IC) function normally.
Public/Granted literature
- US20100039743A1 Electrostatic discharge protection circuit Public/Granted day:2010-02-18
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