Invention Grant
- Patent Title: MEMS varactors
- Patent Title (中): MEMS变容二极管
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Application No.: US12473882Application Date: 2009-05-28
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Publication No.: US08363380B2Publication Date: 2013-01-29
- Inventor: Je-Hsiung Lan , Evgeni P. Gousev , Wenyue Zhang , Manish Kothari , Sang-June Park
- Applicant: Je-Hsiung Lan , Evgeni P. Gousev , Wenyue Zhang , Manish Kothari , Sang-June Park
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01G7/00
- IPC: H01G7/00 ; H01G7/06

Abstract:
MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals.
Public/Granted literature
- US20110109383A1 MEMS VARACTORS Public/Granted day:2011-05-12
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