发明授权
- 专利标题: Generating cut mask for double-patterning process
- 专利标题(中): 生成双图案工艺的切割面具
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申请号: US12985643申请日: 2011-01-06
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公开(公告)号: US08365108B2公开(公告)日: 2013-01-29
- 发明人: Zachary Baum , Henning Haffner , Scott M. Mansfield
- 申请人: Zachary Baum , Henning Haffner , Scott M. Mansfield
- 申请人地址: US NY Armonk US CA Milpitas
- 专利权人: International Business Machines Corporation,Infineon Technologies North America Corporation
- 当前专利权人: International Business Machines Corporation,Infineon Technologies North America Corporation
- 当前专利权人地址: US NY Armonk US CA Milpitas
- 代理机构: Hoffman Warnick LLC
- 代理商 Yuanmin Cai
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00 ; G06K9/00
摘要:
Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.
公开/授权文献
- US20120180006A1 GENERATING CUT MASK FOR DOUBLE-PATTERNING PROCESS 公开/授权日:2012-07-12
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