发明授权
- 专利标题： Film formation method, film formation device, piezoelectric film, piezoelectric device, liquid discharge device and piezoelectric ultrasonic transducer
- 专利标题（中）： 成膜方法，成膜装置，压电膜，压电装置，液体排出装置和压电超声换能器
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申请号： US13443042申请日： 2012-04-10
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公开(公告)号： US08366259B2公开(公告)日： 2013-02-05
- 发明人: Takamichi Fujii , Takayuki Naono , Takami Arakawa
- 申请人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2008-293267 20081117; JP2009-185799 20090810
- 主分类号： B41J2/17
- IPC分类号： B41J2/17
摘要：
When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
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