Invention Grant
US08367451B2 Method and structures for fabricating MEMS devices on compliant layers
有权
在柔性层上制造MEMS器件的方法和结构
- Patent Title: Method and structures for fabricating MEMS devices on compliant layers
- Patent Title (中): 在柔性层上制造MEMS器件的方法和结构
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Application No.: US12178563Application Date: 2008-07-23
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Publication No.: US08367451B2Publication Date: 2013-02-05
- Inventor: Jin Qiu
- Applicant: Jin Qiu
- Applicant Address: US CA Irvine
- Assignee: Wispry, Inc.
- Current Assignee: Wispry, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Methods and structures for fabricating MEMS devices on compliant layers are provided. In particular, disclosed are methods and structures that can include the use of a sacrificial layer composed of a material having material properties relative to one or more other layers. These methods and structures can reduce final device shape sensitivity to process parameters, deposition temperature differences, specific material, time, and/or geometry. Further, such methods and structures can improve the final as-built shape of released devices, reduce variability in the as-built shape, eliminate decoupling of the deposited layers from the substrate, and reduce variability across a product array, die, or wafer.
Public/Granted literature
- US20090134513A1 METHOD AND STRUCTURES FOR FABRICATING MEMS DEVICES ON COMPLIANT LAYERS Public/Granted day:2009-05-28
Information query
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