Invention Grant
- Patent Title: Electron beam apparatus and a device manufacturing method by using said electron beam apparatus
- Patent Title (中): 电子束装置和使用所述电子束装置的装置制造方法
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Application No.: US12007511Application Date: 2008-01-11
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Publication No.: US08368016B1Publication Date: 2013-02-05
- Inventor: Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
- Applicant: Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
- Applicant Address: JP Tokyo
- Assignee: Ebara Corporation
- Current Assignee: Ebara Corporation
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2001-181955 20010615; JP2001-192597 20010626; JP2001-269880 20010906; JP2001-270935 20010906; JP2001-273078 20010910
- Main IPC: H01J37/26
- IPC: H01J37/26

Abstract:
An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
Public/Granted literature
- US20130032716A1 ELECTRON BEAM APPARATUS AND A DEVICE MANUFACTURING METHOD BY USING SAID ELECTRON BEAM APPARATUS Public/Granted day:2013-02-07
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