发明授权
- 专利标题： Oxide semiconductor device with oxide semiconductor layers of different oxygen concentrations and method of manufacturing the same
- 专利标题（中）： 具有不同氧浓度的氧化物半导体层的氧化物半导体器件及其制造方法
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申请号： US12633577申请日： 2009-12-08
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公开(公告)号： US08368067B2公开(公告)日： 2013-02-05
- 发明人: Hiroyuki Uchiyama , Tetsufumi Kawamura , Hironori Wakana
- 申请人： Hiroyuki Uchiyama , Tetsufumi Kawamura , Hironori Wakana
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2008-312814 20081209
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.