发明授权
- 专利标题: Semiconductor light emitting diodes having reflective structures and methods of fabricating same
- 专利标题(中): 具有反射结构的半导体发光二极管及其制造方法
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申请号: US12463709申请日: 2009-05-11
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公开(公告)号: US08368100B2公开(公告)日: 2013-02-05
- 发明人: Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
- 申请人: Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
- 申请人地址: US NC Durham
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 当前专利权人地址: US NC Durham
- 代理机构: Koppel, Patrick, Heybl & Philpott
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L27/15 ; H01L31/12
摘要:
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
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