Invention Grant
- Patent Title: Electromechanical devices having etch barrier layers
- Patent Title (中): 具有蚀刻阻挡层的机电装置
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Application No.: US12489250Application Date: 2009-06-22
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Publication No.: US08368124B2Publication Date: 2013-02-05
- Inventor: Mark W. Miles , John Batey , Clarence Chui , Manish Kothari
- Applicant: Mark W. Miles , John Batey , Clarence Chui , Manish Kothari
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L27/20
- IPC: H01L27/20 ; H01L29/84

Abstract:
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the micro electromechanical systems device.
Public/Granted literature
- US20090323168A1 ELECTROMECHANICAL DEVICES AND METHODS OF FABRICATING SAME Public/Granted day:2009-12-31
Information query
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