发明授权
- 专利标题： Electromechanical devices having etch barrier layers
- 专利标题（中）： 具有蚀刻阻挡层的机电装置
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申请号： US12489250申请日： 2009-06-22
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公开(公告)号： US08368124B2公开(公告)日： 2013-02-05
- 发明人: Mark W. Miles , John Batey , Clarence Chui , Manish Kothari
- 申请人： Mark W. Miles , John Batey , Clarence Chui , Manish Kothari
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM MEMS Technologies, Inc.
- 当前专利权人： QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址： US CA San Diego
- 代理机构： Knobbe Martens Olson & Bear LLP
- 主分类号： H01L27/20
- IPC分类号： H01L27/20 ; H01L29/84
摘要：
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the micro electromechanical systems device.
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