Invention Grant
- Patent Title: Semiconductor device with improved resin configuration
- Patent Title (中): 具有改进树脂结构的半导体器件
-
Application No.: US13159668Application Date: 2011-06-14
-
Publication No.: US08368233B2Publication Date: 2013-02-05
- Inventor: Yoshiharu Ogata
- Applicant: Yoshiharu Ogata
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2004-242330 20040823
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
Public/Granted literature
- US20110241221A1 SEMICONDUCTOR DEVICE WITH IMPROVED RESIN CONFIGURATION Public/Granted day:2011-10-06
Information query
IPC分类: