Invention Grant
- Patent Title: Relaxed metal pitch memory architectures
- Patent Title (中): 轻松的金属音高存储器架构
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Application No.: US13018026Application Date: 2011-01-31
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Publication No.: US08369150B2Publication Date: 2013-02-05
- Inventor: Lyle D. Jones , Roger W. Lindsay , Kirk D. Prall
- Applicant: Lyle D. Jones , Roger W. Lindsay , Kirk D. Prall
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A relaxed metal pitch architecture may include a bit line and a first active area string and a second active area string. The bit line may be directly coupled to the first active area string and to the second active area string. The relaxed metal pitch architecture may be applied to a non-volatile memory structure.
Public/Granted literature
- US20110122700A1 RELAXED METAL PITCH MEMORY ARCHITECTURES Public/Granted day:2011-05-26
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