发明授权
US08370702B2 Error correcting codes for increased storage capacity in multilevel memory devices
有权
错误纠正代码以增加多级存储器件的存储容量
- 专利标题: Error correcting codes for increased storage capacity in multilevel memory devices
- 专利标题(中): 错误纠正代码以增加多级存储器件的存储容量
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申请号: US12482400申请日: 2009-06-10
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公开(公告)号: US08370702B2公开(公告)日: 2013-02-05
- 发明人: Paolo Amato , Giovanni Campardo
- 申请人: Paolo Amato , Giovanni Campardo
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: H03M13/00
- IPC分类号: H03M13/00
摘要:
Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, data may be programmed and/or read from a matrix of nonvolatile memory cells with concatenated encoding/decoding schemes. In some embodiments, a calculation module may determine an actual bit per cell value of a given combination of parameters of a nonvolatile memory device. Still other embodiments may be described and claimed.
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