Invention Grant
- Patent Title: Semiconductor light emitting device having patterned substrate and manufacturing method of the same
- Patent Title (中): 具有图案化衬底的半导体发光器件及其制造方法
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Application No.: US13176712Application Date: 2011-07-05
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Publication No.: US08372669B2Publication Date: 2013-02-12
- Inventor: Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
- Applicant: Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics., Ltd.
- Current Assignee: Samsung Electronics., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0065924 20080708
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
Public/Granted literature
- US20110263061A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2011-10-27
Information query
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