Invention Grant
- Patent Title: Oxide semiconductor and thin film transistor including the same
- Patent Title (中): 包括其的氧化物半导体和薄膜晶体管
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Application No.: US12453962Application Date: 2009-05-28
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Publication No.: US08373163B2Publication Date: 2013-02-12
- Inventor: Chang-jung Kim , Sang-wook Kim , Jin-seong Park
- Applicant: Chang-jung Kim , Sang-wook Kim , Jin-seong Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0081073 20080819
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
Disclosed are an oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may include a lanthanoid (Ln) added to zinc oxide (ZnO) and may be used as a channel material of the TFT.
Public/Granted literature
- US20100044700A1 Oxide semiconductor and thin film transistor including the same Public/Granted day:2010-02-25
Information query
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