Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13159430Application Date: 2011-06-14
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Publication No.: US08373179B2Publication Date: 2013-02-12
- Inventor: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- Applicant: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corp.
- Current Assignee: Lextar Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW97148836A 20081215
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.
Public/Granted literature
- US20110241064A1 LIGHT EMITTING DIODE Public/Granted day:2011-10-06
Information query
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