发明授权
- 专利标题： Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof
- 专利标题（中）： 透明导电膜的构图方法，使用其的薄膜晶体管基板及其制造方法
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申请号： US12982682申请日： 2010-12-30
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公开(公告)号： US08373339B2公开(公告)日： 2013-02-12
- 发明人: Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
- 申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
- 申请人地址： KR Seoul
- 专利权人： LG Display Co., Ltd.
- 当前专利权人： LG Display Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Morgan, Lewis & Bockius LLP
- 优先权： KR2003-8159 20030210; KR2003-19782 20030329
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
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