Invention Grant
- Patent Title: Method for fabricating a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12765331Application Date: 2010-04-22
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Publication No.: US08377784B2Publication Date: 2013-02-19
- Inventor: Yu-Hung Cheng , Jhi-Cherng Lu , Ming-Hua Yu , Chii-Horng Li , Tze-Liang Lee
- Applicant: Yu-Hung Cheng , Jhi-Cherng Lu , Ming-Hua Yu , Chii-Horng Li , Tze-Liang Lee
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present disclosure discloses an exemplary method for fabricating a semiconductor device comprises selectively growing a material on a top surface of a substrate; selectively growing a protection layer on the material; and removing a portion of the protection layer in an etching gas.
Public/Granted literature
- US20110263092A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2011-10-27
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