发明授权
- 专利标题： Split word line fabrication process
- 专利标题（中）： 分割字线制作工艺
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申请号： US12870612申请日： 2010-08-27
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公开(公告)号： US08377813B2公开(公告)日： 2013-02-19
- 发明人: Chih-Hao Lin
- 申请人： Chih-Hao Lin
- 申请人地址： TW Houli Township, Taichung County
- 专利权人： Rexchip Electronics Corporation
- 当前专利权人： Rexchip Electronics Corporation
- 当前专利权人地址： TW Houli Township, Taichung County
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
A method for forming a buried split word line structure is provided. The method comprises the following steps. At first, a substrate having a trench therein is provided. Two liners are formed to a first thickness on sidewalls of the trench. Then, the trench is filled with a first insulating layer to a first height. The two liners are removed. Finally, a conductive material is deposited to a second height between and adjacent to the first insulating layer and the trench. Here, the first height is greater than the second height.
公开/授权文献
- US20120052668A1 SPLIT WORD LINE FABRICATION PROCESS 公开/授权日：2012-03-01