发明授权
- 专利标题: Method of forming electrical connections
- 专利标题(中): 电连接方法
-
申请号: US12768025申请日: 2010-04-27
-
公开(公告)号: US08377816B2公开(公告)日: 2013-02-19
- 发明人: Chung-Shi Liu , Shin-Puu Jeng , Mirng-Ji Lii , Chen-Hua Yu
- 申请人: Chung-Shi Liu , Shin-Puu Jeng , Mirng-Ji Lii , Chen-Hua Yu
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman Ham & Berner, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method of forming electrical connections to a semiconductor wafer. A semiconductor wafer comprising an insulation layer is provided. The insulation layer has a surface. A patterned mask layer is formed over the surface of the insulation layer. The patterned mask layer exposes portions of the surface of the insulation layer through a plurality of holes. The portions of the plurality of holes are filled with a metal material comprising copper to form elongated columns of the metal material. The elongated columns of the metal material have a sidewall surface. The patterned mask layer is removed to expose the sidewall surface of the elongated columns of the metal material. A protection layer is formed on the exposed sidewall surface of the elongated columns of the metal material.
公开/授权文献
- US20110027944A1 METHOD OF FORMING ELECTRICAL CONNECTIONS 公开/授权日:2011-02-03
信息查询
IPC分类: