Invention Grant
- Patent Title: Oxide semiconductor and thin film transistor including the same
- Patent Title (中): 包括其的氧化物半导体和薄膜晶体管
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Application No.: US12659837Application Date: 2010-03-23
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Publication No.: US08378342B2Publication Date: 2013-02-19
- Inventor: Tae-sang Kim , Sang-yoon Lee , Jang-yeon Kwon , Kyoung-seok Son , Ji-sim Jung , Kwang-hee Lee
- Applicant: Tae-sang Kim , Sang-yoon Lee , Jang-yeon Kwon , Kyoung-seok Son , Ji-sim Jung , Kwang-hee Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0024575 20090323; KR10-2010-0014739 20100218
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
Public/Granted literature
- US20100276683A1 Oxide semiconductor and thin film transistor including the same Public/Granted day:2010-11-04
Information query
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