发明授权
- 专利标题: Low leakage FINFETs
- 专利标题(中): 低泄漏FINFET
-
申请号: US13174398申请日: 2011-06-30
-
公开(公告)号: US08378414B2公开(公告)日: 2013-02-19
- 发明人: Gayle W. Miller , Volker Dudek , Michael Graf
- 申请人: Gayle W. Miller , Volker Dudek , Michael Graf
- 申请人地址: US CA San Jose
- 专利权人: Atmel Corporation
- 当前专利权人: Atmel Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Fish & Richardson P.C.
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.
公开/授权文献
- US20110260250A1 Method And Manufacturing Low Leakage Mosfets And FinFets 公开/授权日:2011-10-27